Basic Info.
Model NO.
Weg-65W-1A2c
Quick Charging Function
With Quick Charging Function
Charger Cable Length
6 to 7.9 Feet
Over-Current Protection
With Over-Current Protection
Display
With Display
Color
Black
Socket Type
For USA/Canada
Customized
Customized
Size1
Us 76.5*85*31mm
Size2
UK99.2*85*46mm
Size3
EU 113.8*85*35.8mm
Model
Weg-65W-1A2c
Transport Package
Color Box
Specification
85x31x76.5mm
Trademark
wecent
Origin
China
Production Capacity
500PCS/Months
Packaging & Delivery
Package Size
55.00cm * 56.00cm * 32.00cm
Package Gross Weight
0.112kg
Product Description
There are many ports without losing speed.A smooth access to 5-way expressway,greatly improving office efficiency,and using 3 pruducts such as notebook table and mobile phone. It has wide range voltage can also be used abroad.
For traditional semiconductor materials, high switching frequency will result in high switching loss, while the low loss characteristics of GaN material can reduce heat generation,
while increasing the switching frequency can reduce the volume of transformers and capacitors, which will help reduce the charger Volume and weight.
Now that the fast charging power is getting higher and higher, the mass production of GaN chargers for civilian use can be said to represent a development direction of chargers in the future.
Although the current price is relatively high, it is believed that in the near future, as the technology of GaN materials becomes more mature and more popular, the cost of GaN chargers will become lower and lower.
Gallium nitride, molecular formula GaN, English name Gallium nitride, is a compound of nitrogen and gallium. It is a direct bandgap (direct bandgap) semiconductor and is currently used in fast charging chargers.
The performance is widely recognized by customers. There will be a very broad market in the next 1-3 years.
| Color | Black and white |
| Cert | CCC,CE,FCC,ETL,PSE |
| GW | 1pc/112g |
For traditional semiconductor materials, high switching frequency will result in high switching loss, while the low loss characteristics of GaN material can reduce heat generation,
while increasing the switching frequency can reduce the volume of transformers and capacitors, which will help reduce the charger Volume and weight.
Now that the fast charging power is getting higher and higher, the mass production of GaN chargers for civilian use can be said to represent a development direction of chargers in the future.
Although the current price is relatively high, it is believed that in the near future, as the technology of GaN materials becomes more mature and more popular, the cost of GaN chargers will become lower and lower.
Gallium nitride, molecular formula GaN, English name Gallium nitride, is a compound of nitrogen and gallium. It is a direct bandgap (direct bandgap) semiconductor and is currently used in fast charging chargers.
The performance is widely recognized by customers. There will be a very broad market in the next 1-3 years.